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石墨烯是在2004年发现的炭材料家族中的新成员,具有独特的物理性质和广阔的应用前景。由于在石墨烯方面的开创性实验研究,其发现者A. K.G ei m和K.S.N ovo se l o v荣获了2010年度诺贝尔物理学奖。作为石墨烯研究的基础,石墨烯的制备一直备受关注,其研究的进展也非常迅速。从最早的胶带剥离法,到随后的S i C单晶外延生长法、化学剥离法,直至CVD方法,始终围绕着实现石墨烯这一奇特材料的应用而不断地改进和发展。从早期的物性研究,到现在作为能源材料在锂离子电池、超级电容器,作为电子学材料在晶体管、射频器件,作为力性、电性增强体在复合材料,尤其是透明导电薄膜中的使用,石墨烯愈发焕发出迷人的魅力。在未来实现石墨烯应用的过程中,CVD方法将会发挥越

来越重要的作用,不仅仅局限于目前二维石墨烯薄膜的制备,而且还可以用于一维石墨烯带和三维石墨烯宏观体的制备,从而大大拓宽石墨烯的应用领域。有理由相信,在不久的将来基于CVD法制备的石墨烯的微处理器、电池、显示器及柔性电子器件将走进人们的生活[7]。

图10 利用热释放胶带从C u箔上转移石墨烯的示意图[31]

Fig.10 The s che m ati c ill ustrati on of t ransferri ng g raphene from C u fo ils by ther m al rel ease t ape[31] 参考文献

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